A platform for research: civil engineering, architecture and urbanism
Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures
Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures
Photovoltaic spectroscopic study of GaN epilayers and InGaN quantum well structures
Liu, W. (author) / Li, M. F. (author) / Teo, K. L. (author) / Akutsu, N. (author) / Matsumoto, K. (author)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 14 ; 2794-2798
1999-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Photoluminescence excitation spectroscopy of InGaN epilayers
British Library Online Contents | 2002
|Localized exciton dynamics in InGaN quantum well structures
British Library Online Contents | 2002
|Evaluation of nanoindentation and nanoscratch characteristics of GaN/InGaN epilayers
British Library Online Contents | 2017
|Evaluation of nanoindentation and nanoscratch characteristics of GaN/InGaN epilayers
British Library Online Contents | 2017
|In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes
British Library Online Contents | 2002
|