Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE: Fid-Bau Portal

Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE

Nikitina, I. / Mosina, G. / Melnik, Y. / Nikolaev, A. / Vassilevski, K.

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Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE

Nikitina, I. / Mosina, G. / Melnik, Y. / Nikolaev, A. / Vassilevski, K.

Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE

Nikitina, I. / Mosina, G. / Melnik, Y. / Nikolaev, A. / Vassilevski, K.

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Check availability in my library

Order at Subito €

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Document information

Title:

Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE

Contributors:

Nikitina, I. (author) / Mosina, G. (author) / Melnik, Y. (author) / Nikolaev, A. (author) / Vassilevski, K. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 325 - 329

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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