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Depth profiles obtained from simulation of GaAs bombarded with noble gas ions using MARLOWE

Swart, M. / Auret, F. D. / Goodman, S. A.

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Depth profiles obtained from simulation of GaAs bombarded with noble gas ions using MARLOWE

Swart, M. / Auret, F. D. / Goodman, S. A.

Depth profiles obtained from simulation of GaAs bombarded with noble gas ions using MARLOWE

Swart, M. / Auret, F. D. / Goodman, S. A.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Depth profiles obtained from simulation of GaAs bombarded with noble gas ions using MARLOWE

Contributors:

Swart, M. (author) / Auret, F. D. (author) / Goodman, S. A. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 97-101

Publication date:

2000-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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