Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals: Fid-Bau Portal

Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals

Hong, M.-H. / Samant, A. V. / Pirouz, P.

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Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals

Hong, M.-H. / Samant, A. V. / Pirouz, P.

Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals

Hong, M.-H. / Samant, A. V. / Pirouz, P.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals

Contributors:

Hong, M.-H. (author) / Samant, A. V. (author) / Pirouz, P. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 513-516

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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