Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100): Fid-Bau Portal

Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)

Haworth, L. / Lu, J. / Westwood, D. I. / Macdonald, J. E.

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Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)

Haworth, L. / Lu, J. / Westwood, D. I. / Macdonald, J. E.

Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)

Haworth, L. / Lu, J. / Westwood, D. I. / Macdonald, J. E.

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Check availability in my library

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Document information

Title:

Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)

Contributors:

Haworth, L. (author) / Lu, J. (author) / Westwood, D. I. (author) / Macdonald, J. E. (author)

Published in:

APPLIED SURFACE SCIENCE ; 166 ; 418-422

Publication date:

2000-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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