A platform for research: civil engineering, architecture and urbanism
Investigations on the annealing behavior of high-energy carbon irradiated Au/n-GaAs Schottky barrier diodes
Investigations on the annealing behavior of high-energy carbon irradiated Au/n-GaAs Schottky barrier diodes
Investigations on the annealing behavior of high-energy carbon irradiated Au/n-GaAs Schottky barrier diodes
Jayavel, P. (author) / Asokan, K. (author) / Kanjilal, D. (author) / Kumar, J. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 195-199
2000-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes
British Library Online Contents | 2014
|Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes
British Library Online Contents | 2007
|High-quality NiGe/Ge diodes for Schottky barrier MOSFETs
British Library Online Contents | 2008
|Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K
British Library Online Contents | 2007
|Thermal treatment of the MIS and intimate Ni/n-LEC GaAs Schottky barrier diodes
British Library Online Contents | 1998
|