Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method: Fid-Bau Portal

Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method

Schulze, N. / Gajowski, J. / Semmelroth, K. / Laube, M. / Pensl, G.

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Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method

Schulze, N. / Gajowski, J. / Semmelroth, K. / Laube, M. / Pensl, G.

Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method

Schulze, N. / Gajowski, J. / Semmelroth, K. / Laube, M. / Pensl, G.

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Title:

Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method

Contributors:

Schulze, N. (author) / Gajowski, J. (author) / Semmelroth, K. (author) / Laube, M. (author) / Pensl, G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 45-48

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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