Recent Progress in SiC Epitaxial Growth and Device Processing Technology: Fid-Bau Portal

Recent Progress in SiC Epitaxial Growth and Device Processing Technology

Kimoto, T. / Yano, H. / Tamura, S. / Miyamoto, N. / Fujihira, K. / Negoro, Y. / Matsunami, H.

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Recent Progress in SiC Epitaxial Growth and Device Processing Technology

Kimoto, T. / Yano, H. / Tamura, S. / Miyamoto, N. / Fujihira, K. / Negoro, Y. / Matsunami, H.

Recent Progress in SiC Epitaxial Growth and Device Processing Technology

Kimoto, T. / Yano, H. / Tamura, S. / Miyamoto, N. / Fujihira, K. / Negoro, Y. / Matsunami, H.

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Document information

Title:

Recent Progress in SiC Epitaxial Growth and Device Processing Technology

Contributors:

Kimoto, T. (author) / Yano, H. (author) / Tamura, S. (author) / Miyamoto, N. (author) / Fujihira, K. (author) / Negoro, Y. (author) / Matsunami, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 543-548

Publication date:

2001-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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