A platform for research: civil engineering, architecture and urbanism
Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes
Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes
Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes
Nava, F. (author) / Vanni, P. (author) / Verzellesi, G. (author) / Castaldini, A. (author) / Cavallini, A. (author) / Polenta, L. (author) / Nipoti, R. (author) / Donolato, C. (author)
MATERIALS SCIENCE FORUM ; 353/356 ; 757-762
2001-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
British Library Online Contents | 2006
|3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring
British Library Online Contents | 2011
|Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
British Library Online Contents | 2002
|Hydrogen Detection with Noble Metal-TiO2 Schottky Diodes
British Library Online Contents | 2012
|Electrical properties of Schottky diodes based on Carbazole
British Library Online Contents | 2006
|