Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films: Fid-Bau Portal

Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films

Liu, F. / Zhu, M. / Liu, T.

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Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films

Liu, F. / Zhu, M. / Liu, T.

Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films

Liu, F. / Zhu, M. / Liu, T.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films

Contributors:

Liu, F. (author) / Zhu, M. (author) / Liu, T. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 81 ; 179 - 181

Publication date:

2001-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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