A platform for research: civil engineering, architecture and urbanism
Surface characterization of GaN and AlGaN layers grown by MOVPE
Surface characterization of GaN and AlGaN layers grown by MOVPE
Surface characterization of GaN and AlGaN layers grown by MOVPE
Hashizume, T. (author) / Nakasaki, R. (author) / Ootomo, S. (author) / Oyama, S. (author) / Hasegawa, H. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80 ; 309 - 312
2001-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Low pressure MOVPE grown AlGaN for UV photodetector applications
British Library Online Contents | 1999
|ODMR Studies of MOVPE-Grown GaN Epitaxial Layers
British Library Online Contents | 1994
|Mn doping of GaN layers grown by MOVPE
British Library Online Contents | 2012
|Characterization of MOVPE grown InPSb/InAs heterostructures
British Library Online Contents | 1998
|Influence of light irradiation on ZnTe layers grown by MOVPE
British Library Online Contents | 1994
|