A platform for research: civil engineering, architecture and urbanism
Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
Petters, K. (author) / Gebauer, J. (author) / Redmann, F. (author) / Leipner, H. S. (author) / Krause-Rehberg, R. (author)
MATERIALS SCIENCE FORUM ; 363/365 ; 111-113
2001-01-01
3 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Plasma anodic oxidation of semiinsulating GaAs
British Library Online Contents | 1996
|British Library Online Contents | 2004
|British Library Online Contents | 1999
|Vacancy-Assisted Diffusion of Si in GaAs: Microscopic Theory
British Library Online Contents | 1994
|Vacancy Formation in GaAs under Different Equilibrium Conditions
British Library Online Contents | 2004
|