Photoluminescence of boron-doped Si1-xGex epilayers grown by UHV-CVD: Fid-Bau Portal

Photoluminescence of boron-doped Si1-xGex epilayers grown by UHV-CVD

Rowell, N. L. / Lafontaine, H. / Dion, M.

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Photoluminescence of boron-doped Si1-xGex epilayers grown by UHV-CVD

Rowell, N. L. / Lafontaine, H. / Dion, M.

Photoluminescence of boron-doped Si1-xGex epilayers grown by UHV-CVD

Rowell, N. L. / Lafontaine, H. / Dion, M.

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Check availability in my library

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Document information

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Document information

Title:

Photoluminescence of boron-doped Si1-xGex epilayers grown by UHV-CVD

Contributors:

Rowell, N. L. (author) / Lafontaine, H. (author) / Dion, M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 141 - 145

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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