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Influence of the growth parameters on self-assembled Ge islands on Si(100)

Capellini, G. / De Seta, M. / Evangelisti, F.

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Influence of the growth parameters on self-assembled Ge islands on Si(100)

Capellini, G. / De Seta, M. / Evangelisti, F.

Influence of the growth parameters on self-assembled Ge islands on Si(100)

Capellini, G. / De Seta, M. / Evangelisti, F.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Influence of the growth parameters on self-assembled Ge islands on Si(100)

Contributors:

Capellini, G. (author) / De Seta, M. (author) / Evangelisti, F. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 184 - 187

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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