A platform for research: civil engineering, architecture and urbanism
Effect of annealing environment on antimony redistribution in pseudomorphic Si/SiGe/SiSb heterostructures
Effect of annealing environment on antimony redistribution in pseudomorphic Si/SiGe/SiSb heterostructures
Effect of annealing environment on antimony redistribution in pseudomorphic Si/SiGe/SiSb heterostructures
Avrutin, V. S. (author) / Barabanenkov, M. Y. (author) / Izyumskaya, N. F. (author) / Pustovit, A. N. (author) / Vyatkin, A. F. (author) / Loiko, N. N. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 229 - 233
2002-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Interface states at lattice-matched and pseudomorphic heterostructures
British Library Online Contents | 1992
|Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures
British Library Online Contents | 2002
|p-channel SiGe heterostructures for field effect applications
British Library Online Contents | 1996
|British Library Online Contents | 2005
|Dopant redistribution and formation of electrically active complexes in SiGe
British Library Online Contents | 2001
|