Radiation-induced defects in vitreous chalcogenide semiconductors studied by positron annihilation method: Fid-Bau Portal

Radiation-induced defects in vitreous chalcogenide semiconductors studied by positron annihilation method

Shpotyuk, O. / Filipecki, J.

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Radiation-induced defects in vitreous chalcogenide semiconductors studied by positron annihilation method

Shpotyuk, O. / Filipecki, J.

Radiation-induced defects in vitreous chalcogenide semiconductors studied by positron annihilation method

Shpotyuk, O. / Filipecki, J.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Radiation-induced defects in vitreous chalcogenide semiconductors studied by positron annihilation method

Contributors:

Shpotyuk, O. (author) / Filipecki, J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 537 - 540

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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