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Area preferential nucleation of Ge nano-dots on nano-size porous silicon

Huang, J. / Ye, Z. / Zhang, H. / Ni, X.

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Area preferential nucleation of Ge nano-dots on nano-size porous silicon

Huang, J. / Ye, Z. / Zhang, H. / Ni, X.

Area preferential nucleation of Ge nano-dots on nano-size porous silicon

Huang, J. / Ye, Z. / Zhang, H. / Ni, X.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

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Document information

Title:

Area preferential nucleation of Ge nano-dots on nano-size porous silicon

Contributors:

Huang, J. (author) / Ye, Z. (author) / Zhang, H. (author) / Ni, X. (author)

Published in:

MATERIALS RESEARCH BULLETIN ; 37 ; 793-799

Publication date:

2002-01-01

Size:

7 pages

ISSN:

0025-5408

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11 / 620

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