A platform for research: civil engineering, architecture and urbanism
Analysis of the nucleation of GaN layers on (0001) sapphire
Analysis of the nucleation of GaN layers on (0001) sapphire
Analysis of the nucleation of GaN layers on (0001) sapphire
Degave, F. (author) / Ruterana, P. (author) / Nouet, G. (author) / Je, J. H. (author) / Kim, C. C. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 93 ; 177 - 180
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
GaN nucleation on (0001)-sapphire via ion-induced nitridation of gallium
British Library Online Contents | 2006
|Caracterization of AIN buffer layers on (0001)-sapphire substrates
British Library Online Contents | 1997
|Au–Sapphire (0001) solid–solid interfacial energy
British Library Online Contents | 2006
|TEM study of 1010 inversion domains in GaN layers grown on (0001) sapphire substrate
British Library Online Contents | 1999
|British Library Online Contents | 2009
|