A platform for research: civil engineering, architecture and urbanism
Metallization and Schottky-barrier formation for Se-passivated GaAs(1 0 0) interfaces
Metallization and Schottky-barrier formation for Se-passivated GaAs(1 0 0) interfaces
Metallization and Schottky-barrier formation for Se-passivated GaAs(1 0 0) interfaces
Biel, B. (author) / Benito, I. (author) / Gonzalez, C. (author) / Blanco, J. M. (author) / Ortega, J. (author) / Perez, R. (author) / Flores, F. (author)
APPLIED SURFACE SCIENCE ; 190 ; 475-479
2002-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Schottky barrier formation for passivated semiconductor surfaces
British Library Online Contents | 1996
|Schottky contacts on passivated GaAs(100) surfaces: barrier height and reactivity
British Library Online Contents | 2004
|Schottky-barrier formation at passivated surfaces: covalent and ionic semiconductors
British Library Online Contents | 1996
|Studies on sulphur-passivated GaAs/SiN interfaces
British Library Online Contents | 1994
|Schottky barrier formation: Al deposition on GaAs(110)
British Library Online Contents | 1992
|