Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001): Fid-Bau Portal

Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)

Demczyk, B. G. / Naik, V. M. / Hameed, S. / Naik, R.

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Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)

Demczyk, B. G. / Naik, V. M. / Hameed, S. / Naik, R.

Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)

Demczyk, B. G. / Naik, V. M. / Hameed, S. / Naik, R.

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Check availability in my library

Order at Subito €

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Document information

Title:

Comparison of strain relaxation in epitaxial Si0.3Ge0.7 films grown on Si(001) and Ge(001)

Contributors:

Demczyk, B. G. (author) / Naik, V. M. (author) / Hameed, S. (author) / Naik, R. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 94 ; 196 - 201

Publication date:

2002-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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