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Binding Energy for a Shallow Donor Impurity in GaAs-(Ga, Al) As Quantum Wells Under Hydrostatic Pressure and Applied Electric Field
Binding Energy for a Shallow Donor Impurity in GaAs-(Ga, Al) As Quantum Wells Under Hydrostatic Pressure and Applied Electric Field
Binding Energy for a Shallow Donor Impurity in GaAs-(Ga, Al) As Quantum Wells Under Hydrostatic Pressure and Applied Electric Field
Montes, A. (author) / Morales, A. L. (author) / Duque, C. A. (author)
SURFACE REVIEW AND LETTERS ; 9 ; 1753-1756
2002-01-01
4 pages
Article (Journal)
English
DDC:
530.417
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