A platform for research: civil engineering, architecture and urbanism
Photoluminescence intensity of GaN films with widely varying dislocation density
Photoluminescence intensity of GaN films with widely varying dislocation density
Photoluminescence intensity of GaN films with widely varying dislocation density
Sun, Y. J. (author) / Brandt, O. (author) / Ploog, K. H. (author)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 18 ; 1247-1250
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te
British Library Online Contents | 2006
|Limit of Dislocation Density and Dislocation Strengthening in Iron
British Library Online Contents | 2006
|Structural defects and dislocation-related photoluminescence in erbium-implanted silicon
British Library Online Contents | 2002
|Effect of Solution Treatment on Dislocation Density in NiTi Thin Films
British Library Online Contents | 2004
|