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Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Nishizawa, S.-i. / Michikawa, Y. / Kato, T. / Hirose, F. / Oyanagi, N. / Arai, K.

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Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Nishizawa, S.-i. / Michikawa, Y. / Kato, T. / Hirose, F. / Oyanagi, N. / Arai, K.

Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Nishizawa, S.-i. / Michikawa, Y. / Kato, T. / Hirose, F. / Oyanagi, N. / Arai, K.

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Check availability in my library

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Document information

Title:

Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Contributors:

Nishizawa, S.-i. (author) / Michikawa, Y. (author) / Kato, T. (author) / Hirose, F. (author) / Oyanagi, N. (author) / Arai, K. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 13-16

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Garcon, I. / Rouault, A. / Anikin, M. et al. | British Library Online Contents | 1995

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Epelbaum, B. M. / Hofmann, D. / Bickermann, M. et al. | British Library Online Contents | 2002

Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC

Ohtani, N. / Katsuno, M. / Takahashi, J. et al. | British Library Online Contents | 1998