Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation: Fid-Bau Portal

Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation

Ciechonski, R. R. / Yakimova, R. / Syvajarvi, M. / Janzen, E.

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Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation

Ciechonski, R. R. / Yakimova, R. / Syvajarvi, M. / Janzen, E.

Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation

Ciechonski, R. R. / Yakimova, R. / Syvajarvi, M. / Janzen, E.

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Access via TIB

Check availability in my library

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Document information

Title:

Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation

Contributors:

Ciechonski, R. R. (author) / Yakimova, R. (author) / Syvajarvi, M. (author) / Janzen, E. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 75-78

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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