A platform for research: civil engineering, architecture and urbanism
Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques
Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques
Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques
Sun, H. D. (author) / Macaluso, R. (author) / Calvez, S. (author) / Dawson, M. D. (author) / Robert, F. (author) / Bryce, A. C. (author) / Marsh, J. H. (author) / Riechert, H. (author) / Gilet, P. (author) / Grenouillet, L. (author)
2003-01-01
5 pages
Article (Journal)
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Defect formation during laser induced intermixing of GaAs/AlGaAs multiple-quantum-well structures
British Library Online Contents | 1997
|Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures
British Library Online Contents | 2001
|British Library Online Contents | 2012
|Fabrication of photonic integrated circuits using quantum well intermixing
British Library Online Contents | 1994
|Evidence for indirect recombination in GaInNAs/GaAs strained multiple quantum wells
British Library Online Contents | 2002
|