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Oxygen passivation and reactivation of interface states introduced during Schottky diode fabrication on bulk n-type 6H-SiC
Oxygen passivation and reactivation of interface states introduced during Schottky diode fabrication on bulk n-type 6H-SiC
Oxygen passivation and reactivation of interface states introduced during Schottky diode fabrication on bulk n-type 6H-SiC
van Wyk, E. (author) / Leitch, A. W. (author)
APPLIED SURFACE SCIENCE ; 221 ; 415-420
2004-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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