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Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP

Yasuda, A. / Suto, K. / Nishizawa, J. i.

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Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP

Yasuda, A. / Suto, K. / Nishizawa, J. i.

Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP

Yasuda, A. / Suto, K. / Nishizawa, J. i.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP

Contributors:

Yasuda, A. (author) / Suto, K. (author) / Nishizawa, J. i. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 487-490

Publication date:

2003-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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