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Interface States in Abrupt SiO~2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
Interface States in Abrupt SiO~2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
Interface States in Abrupt SiO~2/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters
Ohnuma, T. (author) / Tsuchida, H. (author) / Jikimoto, T. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1297-1300
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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