Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls": Fid-Bau Portal

Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"

Chassagne, T. / Leycuras, A. / Balloud, C. / Arcade, P. / Peyre, H. / Juillaguet, S.

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Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"

Chassagne, T. / Leycuras, A. / Balloud, C. / Arcade, P. / Peyre, H. / Juillaguet, S.

Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"

Chassagne, T. / Leycuras, A. / Balloud, C. / Arcade, P. / Peyre, H. / Juillaguet, S.

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Title:

Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"

Contributors:

Chassagne, T. (author) / Leycuras, A. (author) / Balloud, C. (author) / Arcade, P. (author) / Peyre, H. (author) / Juillaguet, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 273-276

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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