A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Calculation of residual thermal stress in GaN epitaxial layers grown on technologically important substrates
Calculation of residual thermal stress in GaN epitaxial layers grown on technologically important substrates
Calculation of residual thermal stress in GaN epitaxial layers grown on technologically important substrates
Barghout, K. (author) / Chaudhuri, J. (author)
JOURNAL OF MATERIALS SCIENCE ; 39 ; 5817-5823
2004-01-01
7 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates
| Wiley | 2018
Thermochemistry of New, Technologically Important Inorganic Materials
| British Library Online Contents | 1997
Microwave assisted synthesis of technologically important transition metal silicides
| British Library Online Contents | 1997
Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates
| British Library Online Contents | 2006
Size dependent exciton energy of various technologically important colloidal quantum dots
| British Library Online Contents | 2008