A platform for research: civil engineering, architecture and urbanism
Noise behavior of SiGe n-MODFETS
Noise behavior of SiGe n-MODFETS
Noise behavior of SiGe n-MODFETS
Rennane, A. (author) / Bary, L. (author) / Cibiel, G. (author) / Llopis, O. (author) / Hackbarth, T. (author) / Graffeuil, J. (author) / Plana, R. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 383-388
2005-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electroluminescence of Ge/SiGe p-MODFETs
British Library Online Contents | 2005
|Relating -wave mapped data to physical parameters for MODFETs
British Library Online Contents | 1993
|High-frequency noise in SiGe HBTs
British Library Online Contents | 2003
|A 4.4 to 5GHz SiGe low noise amplifier
British Library Online Contents | 2004
|SiGe based low noise amplifier for WLAN applications
British Library Online Contents | 2004
|