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Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights
Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights
Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights
Pierobon, R. (author) / Meneghesso, G. (author) / Zanoni, E. (author) / Roccaforte, F. (author) / La Via, F. (author) / Raineri, V. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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