Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application: Fid-Bau Portal

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Shao, Q. Y. / Li, A. D. / Cheng, J. B. / Ling, H. Q. / Wu, D. / Liu, Z. G. / Bao, Y. J. / Wang, M. / Ming, N. B. / Wang, C.

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Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Shao, Q. Y. / Li, A. D. / Cheng, J. B. / Ling, H. Q. / Wu, D. / Liu, Z. G. / Bao, Y. J. / Wang, M. / Ming, N. B. / Wang, C.

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Shao, Q. Y. / Li, A. D. / Cheng, J. B. / Ling, H. Q. / Wu, D. / Liu, Z. G. / Bao, Y. J. / Wang, M. / Ming, N. B. / Wang, C.

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Document information

Title:

Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Contributors:

Shao, Q. Y. (author) / Li, A. D. (author) / Cheng, J. B. (author) / Ling, H. Q. (author) / Wu, D. (author) / Liu, Z. G. (author) / Bao, Y. J. (author) / Wang, M. (author) / Ming, N. B. (author) / Wang, C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 250 ; 14-20

Publication date:

2005-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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