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Homoepitaxial growth of GaN single crystals using gallium hydride

Imade, M. / Kawahara, M. / Kawamura, F. / Yoshimura, M. / Mori, Y. / Sasaki, T.

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Homoepitaxial growth of GaN single crystals using gallium hydride

Imade, M. / Kawahara, M. / Kawamura, F. / Yoshimura, M. / Mori, Y. / Sasaki, T.

Homoepitaxial growth of GaN single crystals using gallium hydride

Imade, M. / Kawahara, M. / Kawamura, F. / Yoshimura, M. / Mori, Y. / Sasaki, T.

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Check availability in my library

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Document information

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Document information

Title:

Homoepitaxial growth of GaN single crystals using gallium hydride

Contributors:

Imade, M. (author) / Kawahara, M. (author) / Kawamura, F. (author) / Yoshimura, M. (author) / Mori, Y. (author) / Sasaki, T. (author)

Published in:

MATERIALS LETTERS ; 59 ; 4026-4029

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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