A platform for research: civil engineering, architecture and urbanism
Oxynitride mediated epitaxy of gallium nitride on silicon(111) substrates in a merged hydride/metal-organic vapor phase epitaxy system
Oxynitride mediated epitaxy of gallium nitride on silicon(111) substrates in a merged hydride/metal-organic vapor phase epitaxy system
Oxynitride mediated epitaxy of gallium nitride on silicon(111) substrates in a merged hydride/metal-organic vapor phase epitaxy system
Mastro, M. A. (author) / Kryliouk, O. M. (author) / Anderson, T. J. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 127 ; 91-97
2006-01-01
7 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Substrates for gallium nitride epitaxy
British Library Online Contents | 2002
|British Library Online Contents | 2002
|New Group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy
British Library Online Contents | 1993
|Suspended aluminum nitride structures grown via metal organic vapor phase epitaxy
British Library Online Contents | 2009
|British Library Online Contents | 1997
|