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    Energy levels in doped SiGe quantum well studied by admittance spectroscopy

    New search for: Cai, X. S.
    New search for: Qin, J.
    New search for: Yang, H. B.
    New search for: Yuan, F. Y.
    New search for: Fan, Y. L.
    New search for: Lu, F.
    New search for: Jiang, Z. M.

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    Energy levels in doped SiGe quantum well studied by admittance spectroscopy

    New search for: Cai, X. S.
    New search for: Qin, J.
    New search for: Yang, H. B.
    New search for: Yuan, F. Y.
    New search for: Fan, Y. L.
    New search for: Lu, F.
    New search for: Jiang, Z. M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Energy levels in doped SiGe quantum well studied by admittance spectroscopy

    New search for: Cai, X. S.
    New search for: Qin, J.
    New search for: Yang, H. B.
    New search for: Yuan, F. Y.
    New search for: Fan, Y. L.
    New search for: Lu, F.
    New search for: Jiang, Z. M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Energy levels in doped SiGe quantum well studied by admittance spectroscopy

    Contributors:

    Cai, X. S. (author) / Qin, J. (author) / Yang, H. B. (author) / Yuan, F. Y. (author) / Fan, Y. L. (author) / Lu, F. (author) / Jiang, Z. M. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 252 ; 2776-2781

    Publication date:

    2006-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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