The Characteristic of the La~3Ga~5SiO~1~4 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere: Fid-Bau Portal

The Characteristic of the La~3Ga~5SiO~1~4 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

Bamba, N. / Kato, K. / Taishi, T. / Hayashi, T. / Hoshikawa, K. / Fukami, T.

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The Characteristic of the La~3Ga~5SiO~1~4 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

Bamba, N. / Kato, K. / Taishi, T. / Hayashi, T. / Hoshikawa, K. / Fukami, T.

The Characteristic of the La~3Ga~5SiO~1~4 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

Bamba, N. / Kato, K. / Taishi, T. / Hayashi, T. / Hoshikawa, K. / Fukami, T.

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Title:

The Characteristic of the La~3Ga~5SiO~1~4 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

Contributors:

Bamba, N. (author) / Kato, K. (author) / Taishi, T. (author) / Hayashi, T. (author) / Hoshikawa, K. (author) / Fukami, T. (author) / Kim, H. S. / Li, Y. B. / Lee, S. W.

Published in:

Eco-Materials Processing & Design VII: Proceedings of the Conference of the 7^t^h International Symposium on Eco-Materials Processing & Design January 8-11, 2006, Chengdu, China ; 842-845

MATERIALS SCIENCE FORUM ; 510/511

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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