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The different behaviour of CiOi and CiCs defects in SiGe
The different behaviour of CiOi and CiCs defects in SiGe
The different behaviour of CiOi and CiCs defects in SiGe
Tan, J. (author) / Davies, G. (author) / Hayama, S. (author) / Markevich, V. P. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 58-61
2006-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
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