Defect influence on luminescence efficiency of GaN-based LEDs: Fid-Bau Portal

Defect influence on luminescence efficiency of GaN-based LEDs

Li, S. / Fang, Z. / Chen, H. / Li, J. / Chen, X. / Yuan, X. / Sekiguchi, T. / Wang, Q. / Kang, J.

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Defect influence on luminescence efficiency of GaN-based LEDs

Li, S. / Fang, Z. / Chen, H. / Li, J. / Chen, X. / Yuan, X. / Sekiguchi, T. / Wang, Q. / Kang, J.

Defect influence on luminescence efficiency of GaN-based LEDs

Li, S. / Fang, Z. / Chen, H. / Li, J. / Chen, X. / Yuan, X. / Sekiguchi, T. / Wang, Q. / Kang, J.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Defect influence on luminescence efficiency of GaN-based LEDs

Contributors:

Li, S. (author) / Fang, Z. (author) / Chen, H. (author) / Li, J. (author) / Chen, X. (author) / Yuan, X. (author) / Sekiguchi, T. (author) / Wang, Q. (author) / Kang, J. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 371-374

Publication date:

2006-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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