A platform for research: civil engineering, architecture and urbanism
On the formation of Si nanowires by molecular beam epitaxy
On the formation of Si nanowires by molecular beam epitaxy
On the formation of Si nanowires by molecular beam epitaxy
Werner, P. (author) / Zakharov, N. D. (author) / Gerth, G. (author) / Schubert, L. (author) / Gosele, U. (author)
INTERNATIONAL JOURNAL OF MATERIALS RESEARCH ; 97 ; 1008-1015
2006-01-01
8 pages
Article (Journal)
English
DDC:
669.9
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires
British Library Online Contents | 1999
|Atomistic Aspects of Sige Nanostructure Formation by Molecular-Beam Epitaxy
Springer Verlag | 2002
|Nucleation during molecular beam epitaxy
British Library Online Contents | 1994
|Molecular Beam Epitaxy and Heterostructures
TIBKAT | 1985
|Controlled formation of oxide materials by laser molecular beam epitaxy
British Library Online Contents | 1994
|