Efficient Top-Gate, Ambipolar, Light-Emitting Field-Effect Transistors Based on a Green-Light-Emitting Polyfluorene: Fid-Bau Portal

Efficient Top-Gate, Ambipolar, Light-Emitting Field-Effect Transistors Based on a Green-Light-Emitting Polyfluorene

Zaumseil, J. / Donley, C. L. / Kim, J. S. / Friend, R. H. / Sirringhaus, H.

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Efficient Top-Gate, Ambipolar, Light-Emitting Field-Effect Transistors Based on a Green-Light-Emitting Polyfluorene

Zaumseil, J. / Donley, C. L. / Kim, J. S. / Friend, R. H. / Sirringhaus, H.

Efficient Top-Gate, Ambipolar, Light-Emitting Field-Effect Transistors Based on a Green-Light-Emitting Polyfluorene

Zaumseil, J. / Donley, C. L. / Kim, J. S. / Friend, R. H. / Sirringhaus, H.

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Check availability in my library

Order at Subito €

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Document information

Title:

Efficient Top-Gate, Ambipolar, Light-Emitting Field-Effect Transistors Based on a Green-Light-Emitting Polyfluorene

Contributors:

Zaumseil, J. (author) / Donley, C. L. (author) / Kim, J. S. (author) / Friend, R. H. (author) / Sirringhaus, H. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 18 ; 2708-2712

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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