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Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion
Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion
Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion
Voronkov, V. V. (author) / Falster, R. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 134 ; 227-232
2006-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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