A platform for research: civil engineering, architecture and urbanism
The Role of Segregation in InGaAs Heteroepitaxy
The Role of Segregation in InGaAs Heteroepitaxy
The Role of Segregation in InGaAs Heteroepitaxy
Litvinov, D. (author) / Gerthsen, D. (author) / Rosenauer, A. (author) / Schowalter, M. (author) / Passow, T. (author) / Hetterich, M. (author) / Chandra, T. / Tsuzaki, K. / Militzer, M. / Ravindran, C.
2007-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Enhancement of alloy segregation due to strain assisted atomic diffusion in heteroepitaxy
British Library Online Contents | 1998
|Physics of Heteroepitaxy and Heterophases
British Library Online Contents | 2002
|Heteroepitaxy of InP on Si Substrates
British Library Online Contents | 1993
|Be-chalcogenides: heteroepitaxy and interface properties
British Library Online Contents | 1998
|SiGe Technology: Heteroepitaxy and High-Speed Microelectronics
British Library Online Contents | 2000
|