Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates: Fid-Bau Portal

Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates

Ai, Y. / Xue, C. / Sun, C. / Sun, L. / Zhuang, H. / Wang, F. / Yang, Z. / Qin, L.

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Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates

Ai, Y. / Xue, C. / Sun, C. / Sun, L. / Zhuang, H. / Wang, F. / Yang, Z. / Qin, L.

Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates

Ai, Y. / Xue, C. / Sun, C. / Sun, L. / Zhuang, H. / Wang, F. / Yang, Z. / Qin, L.

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Title:

Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates

Contributors:

Ai, Y. (author) / Xue, C. (author) / Sun, C. (author) / Sun, L. (author) / Zhuang, H. (author) / Wang, F. (author) / Yang, Z. (author) / Qin, L. (author)

Published in:

MATERIALS LETTERS ; 61 ; 4103-4106

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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