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First principle calculations of the ground state properties and structural phase transformation for ternary chalcogenide semiconductor under high pressure
First principle calculations of the ground state properties and structural phase transformation for ternary chalcogenide semiconductor under high pressure
First principle calculations of the ground state properties and structural phase transformation for ternary chalcogenide semiconductor under high pressure
Thangavel, R. (author) / Prathiba, G. (author) / Anto Naanci, B. (author) / Rajagopalan, M. (author) / Kumar, J. (author)
COMPUTATIONAL MATERIALS SCIENCE ; 40 ; 193-200
2007-01-01
8 pages
Article (Journal)
English
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