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    High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism

    New search for: Boutarek, N.
    New search for: Chaussende, D.
    New search for: Madar, R.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

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    High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism

    New search for: Boutarek, N.
    New search for: Chaussende, D.
    New search for: Madar, R.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism

    New search for: Boutarek, N.
    New search for: Chaussende, D.
    New search for: Madar, R.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism

    Contributors:

    Boutarek, N. (author) / Chaussende, D. (author) / Madar, R. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

    Published in:

    Silicon Carbide and Related Materials 2006 ; 105-108

    MATERIALS SCIENCE FORUM ; 556/557

    Publication date:

    2007-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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