Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers: Fid-Bau Portal

Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers

Trunek, A. J. / Neudeck, P. G. / Spry, D. J.

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Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers

Trunek, A. J. / Neudeck, P. G. / Spry, D. J.

Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers

Trunek, A. J. / Neudeck, P. G. / Spry, D. J.

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Document information

Title:

Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers

Contributors:

Trunek, A. J. (author) / Neudeck, P. G. (author) / Spry, D. J. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

Published in:

Silicon Carbide and Related Materials 2006 ; 117-120

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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