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    Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping

    New search for: Kato, T.
    New search for: Miura, T.
    New search for: Wada, K.
    New search for: Hozomi, E.
    New search for: Taniguchi, H.
    New search for: Nishizawa, S. I.
    New search for: Arai, K.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

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    Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping

    New search for: Kato, T.
    New search for: Miura, T.
    New search for: Wada, K.
    New search for: Hozomi, E.
    New search for: Taniguchi, H.
    New search for: Nishizawa, S. I.
    New search for: Arai, K.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping

    New search for: Kato, T.
    New search for: Miura, T.
    New search for: Wada, K.
    New search for: Hozomi, E.
    New search for: Taniguchi, H.
    New search for: Nishizawa, S. I.
    New search for: Arai, K.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping

    Contributors:

    Kato, T. (author) / Miura, T. (author) / Wada, K. (author) / Hozomi, E. (author) / Taniguchi, H. (author) / Nishizawa, S. I. (author) / Arai, K. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K.

    Published in:

    Silicon Carbide and Related Materials 2006 ; 239-242

    MATERIALS SCIENCE FORUM ; 556/557

    Publication date:

    2007-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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