A platform for research: civil engineering, architecture and urbanism
Low-Temperature Epitaxial Growth of Vertical In2O3 Nanowires on A-Plane Sapphire with Hexagonal Cross-Section
Low-Temperature Epitaxial Growth of Vertical In2O3 Nanowires on A-Plane Sapphire with Hexagonal Cross-Section
Low-Temperature Epitaxial Growth of Vertical In2O3 Nanowires on A-Plane Sapphire with Hexagonal Cross-Section
Chen, C. J. (author) / Xu, W. L. (author) / Chern, M. Y. (author)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 19 ; 3012-3015
2007-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Control of growth orientation and shape for epitaxially grown In2O3 nanowires on a-plane sapphire
British Library Online Contents | 2010
|Facile hydrothermal epitaxial growth of vertical ZnO post arrays on sapphire substrates
British Library Online Contents | 2013
|Defect-induced ferromagnetism in undoped In2O3 nanowires
British Library Online Contents | 2014
|British Library Online Contents | 2009
|