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The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells

Vernon-Parry, K. D. / Evans-Freeman, J. H. / Dawson, P.

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The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells

Vernon-Parry, K. D. / Evans-Freeman, J. H. / Dawson, P.

The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells

Vernon-Parry, K. D. / Evans-Freeman, J. H. / Dawson, P.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells

Contributors:

Vernon-Parry, K. D. (author) / Evans-Freeman, J. H. (author) / Dawson, P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 146 ; 231-235

Publication date:

2008-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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